Research
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Extraction of Elasto-Optic Coefficient of Thin Film Arsenic Trisulfide Using a Mach-Zehnder Acousto-Optic Modulator on Lithium Niobate
An acousto-Optic Modulator (AOM) formed by an Arsenic Trisulfide (As2S3) Mach-Zehnder interferometer (MZI), operating in a push-pull configuration and placed inside a surface acoustic wave (SAW) cavity on a Y-cut Lithium Niobate (LN) wafer is demonstrated. This is the first demonstration of such...
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Acousto-Optic Modulator based on the Integration of Arsenic Trisulfide Photonic Components with Lithium Niobate Surface Acoustic Waves
An acousto-optic modulator formed by an Arsenic Trisulfide (As 2 S 3) Mach-Zehnder interferometer placed inside a surface acoustic wave cavity on a Lithium Niobate (LN) wafer is demonstrated for the first time. Presented at CLEO: Science and Innovations, 2019 Details...
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Efficient arsenic trisulfide vertical grating coupler on lithium niobate for integrated photonic applications
An efficient vertical grating coupler design for arsenic trisulfide (As2S3) on silicon dioxide (SiO2) on lithium niobate (LN) is proposed, fabricated, and experimentally verified. We report 4 dB coupling efficiency per grating for vertical fiber coupling at a wavelength of 1550 nm with a 3 dB...
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Efficient coupling to slow light photonic crystal waveguide
Slow light photonic crystal waveguides (PCWs) have been the subject of intensive study due to their potential for on-chip applications such as optical buffers and the enhancement of nonlinear phenomenon. However, due to high group velocity mismatch between the strip waveguide and the slow light...
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IEEE conference paper: Device Scaling Issues in GaN Based Double Heterojunction Field-Effect Transistor and Performance Analysis
The device performance of GaN based Double Heterojunction Field-Effect Transistor(DHFET) is largely de-pendent on device scaling issues. The authors’ simulation results show that a decrease in source–gate spacing can improve device performance, enhancing the device output current and the...
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IEEE Conference Paper: Recessed Y-gate AlN/GaN/AlGaN DHFET with GaN cap layer at the gate edge
We have proposed and simulated recessed Y-gate AlN/GaN/AlGaN DHFET structure with GaN cap layer at drain side of the gate as well as compared its simulated characteristics with the conventional DHFET. The threshold ...
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Undergraduate thesis topic: A study on GaN based Double Heterojunction Field-Effect Transistors
The increase of requirements for millimeter-wave amplifiers in wireless communication systems and radars has induced innovative developments in solid-state device structures. One emerging area had been gallium nitride (GaN)-based field-effect transistors. Not only because of their wide...